Govt of Odisha Approves Fiscal Support for Phase 1 of RIR Power Electronics’ SiC Semiconductor Plant in Bhubaneswar

The government of Odisha has approved fiscal support for RIR Power Electronics Limited for its Silicon Carbide (SiC) semiconductor manufacturing facility. The Odisha Computer Application Center (OCAC) approved the pro-rata disbursement of a capital subsidy for the project, which has a total cost of ~₹618 crore for both phases.

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Dr. Harshad Mehta, Chairman & Director, RIR Power Electronics Limited
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The Electronics & Information Technology Department, Government of Odisha, has approved fiscal support for Phase 1 for RIR Power Electronics Limited towards its Silicon Carbide (SiC) semiconductor manufacturing facility in Odisha. Odisha Computer Application Center (OCAC), the nodal agency for Electronics & Information Technology Department, Government of Odisha has approved and notified the fiscal support agreement for pro-rata disbursement of capital subsidy to the Company.

This project was approved by the State-Level Single Window Clearance Committee (SLSWCC) and the state cabinet in the last fiscal year with a total project cost of ~618 crore for both, phase-1 and phase-2.

Project Financials and Status:

●      Total project cost: ~618 crore

●      Capital expenditure incurred: ~65 crore and eligible government capital subsidy: ~32 crore

“We extend our sincere gratitude to the Government of Odisha for their forward-thinking support in helping bring this first-of-its-kind SiC semiconductor facility to life. Their backing empowers us to introduce advanced technologies and modern manufacturing capabilities to the state. This development lays a strong foundation for innovation, employment generation, and energy-efficient solutions in electric vehicles, renewables, power electronics, and industrial automation across India,” said Dr. Harshad Mehta, Chairman & Director, RIR Power Electronics Limited.

The progress made above represents a significant step in our efforts to become a leading player from India in the high-power semiconductor manufacturing and contribute meaningfully to the Make in India initiative. The facility will manufacture high-power SiC MOSFETs, IGBTs and diodes ranging from 3.3 kV to 20 kV, catering to key industries such as:

●       Electric Vehicles (EVs)

●       Renewable Energy and Power Grid Systems

●       Power Electronics

●       Industrial Automation

SiC semiconductors, known for their high performance and energy efficiency, are expected to transform power-based technologies, boost local manufacturing capacity, and drive sustainable industrial growth across the country.

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